| Revista: | Revista mexicana de física |
| Base de datos: | |
| Número de sistema: | 000592434 |
| ISSN: | 0035-001X |
| Autores: | Mancer, H.1 Caid, M.2 Rached, H.1 Nakoul, Z.2 Rached, D.2 |
| Instituciones: | 1Université Hassiba Ben Bouali de Chlef, Faculty of Exact-Sciences and Informatics, Chlef, Chlef. Argelia 2Université Djillali Liabes de Sidi Bel Abbès, Faculty of Exact-Sciences, Sidi Bel-Abbès, Sidi Bel Abbès. Argelia 3Ecole Normale Supérieure de Bou-Saâda, Département des Sciences Exactes, M’sila. Algérie |
| Año: | 2023 |
| Periodo: | Ene-Feb |
| Volumen: | 69 |
| Número: | 1 |
| País: | México |
| Idioma: | Inglés |
| Resumen en inglés | The primary goal of this study is to investigate the effect of different exchange-correlation functionals on the optoelectronic and elastic properties of the Ag2O chalcogenide compound. For the electronic structures and optical spectra, the Tran-Blaha modified Becke-Johnson approach combined with GGA and GGA+U (mBJ-GGA-PBEsol and mBJ-GGA-PBEsol+U, respectively) was used. The available theoretical and experimental data for the bandgap energy were reported to determine whether there is a correlation with our results. The electronic structure revealed that our compound is a direct semiconductor at the R-symmetry point with a bandgap of 1.22 eV, which agrees well with the experimental values for the first time. The elastic constants were also evaluated using the IRelast package, which revealed that the compound was mechanically stable. Finally, the optical response was systematically studied, and it was found that Ag2O exhibited excellent optical efficiency. |
| Keyword: | Chalcogenide compounds, MBJ-GGA-PBEsol+U, Electronic structures, Optical response, DFT calculations |
| Texto completo: | Texto completo (Ver PDF) Texto completo (Ver HTML) |
