Growth and UV detector of serrated GaN nanowires by chemical vapor deposition



Título del documento: Growth and UV detector of serrated GaN nanowires by chemical vapor deposition
Revista: Revista mexicana de física
Base de datos: PERIÓDICA
Número de sistema: 000453941
ISSN: 0035-001X
Autors: 1
1
Institucions: 1Wuhan University, School of Physics and Technology, Hubei. China
2Hubei Nuclear Solid Physics Key Laboratory, Hubei. China
Any:
Període: Jul-Ago
Volum: 66
Número: 4
Paginació: 490-495
País: México
Idioma: Inglés
Tipo de documento: Artículo
Enfoque: Analítico, teórico
Resumen en inglés Serrated GaN nanowires were synthesized on the sapphire substrate by chemical vapor deposition. Copper nanowires were synthesized by a liquid-phase reduction method. The surface morphology of GaN and copper nanowires was observed by scanning electron microscopy. An ultraviolet detector based on GaN nanowires was prepared with copper nanowires as electrode. The results show that the device is a photoconductive detector. The detector has a different response under different wavelength light illumination and has the maximum response under 365 nm ultraviolet light
Disciplines Física y astronomía
Paraules clau: Física,
Deposición de vapor químico,
Nanocables de GaN,
Nanocables de cobre,
Detector ultravioleta
Keyword: Physics,
Chemical vapor deposition,
GaN nanowires,
Copper nanowires,
Ultraviolet detector
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