| Revista: | Revista mexicana de física |
| Base de datos: | PERIÓDICA |
| Número de sistema: | 000429656 |
| ISSN: | 0035-001X |
| Autors: | Domínguez, M.A1 Pau, J.L2 Obregón, O1 Luna, A1 Redondo Cubero, A2 |
| Institucions: | 1Benemérita Universidad Autónoma de Puebla, Instituto de Ciencias, Puebla. México 2Universidad Autónoma de Madrid, Facultad de Ciencias, Madrid. España |
| Any: | 2019 |
| Període: | Ene-Feb |
| Volum: | 65 |
| Número: | 1 |
| País: | México |
| Idioma: | Inglés |
| Tipo de documento: | Artículo |
| Enfoque: | Analítico, teórico |
| Resumen en inglés | In this work, high mobility thin-film transistors based on zinc nitride (Zn3N2) sputtered at room temperature using spin-on glass (SOG) as gate dielectric are presented. The inverted coplanar structure is used for the Zn3N2 thin-film transistors. The devices exhibit an on/off-current ratio of 106 and a subthreshold slope of 0.88 V/decade. The extracted field-effect mobility was 15.8 cm2/Vs which is among the highest reported for Zn3N2 thin-film transistors. In addition, n-type MOS capacitors were fabricated and characterized by capacitance-voltage and capacitance-frequency measurements to evaluate the dielectric characteristics of the SOG film |
| Disciplines | Física y astronomía |
| Paraules clau: | Física, Temperatura, Películas delgadas, Nitruro de zinc, Transistores |
| Keyword: | Physics, Temperature, Thin films, Zinc nitride, Transistors |
| Text complet: | Texto completo (Ver HTML) Texto completo (Ver PDF) |
