| Revista: | Brazilian journal of physics |
| Base de datos: | PERIÓDICA |
| Número de sistema: | 000159308 |
| ISSN: | 0103-9733 |
| Autores: | Carvalho, Wilson de1 Bernussi, Ayrton Andre Furtado, Mario Tosi Gobbi, Angelo Luiz Cotta, Monica |
| Instituciones: | 1Fundacao Centro de Pesquisa e Desenvolvimento em Telecomunicacoes, Campinas, Sao Paulo. Brasil 2Universidade Estadual de Campinas, Laboratorio de Pesquisa em Dispositivos, Campinas, Sao Paulo. Brasil |
| Año: | 1999 |
| Periodo: | Dic |
| Volumen: | 29 |
| Número: | 4 |
| Paginación: | 839-842 |
| País: | Brasil |
| Idioma: | Inglés |
| Tipo de documento: | Artículo |
| Enfoque: | Analítico |
| Resumen en inglés | Zero-Net-Strained (ZNS) InGaAsP/InGaAsP/InP Multi Quantum Wells (MQW) structures grown by Low Pressure Metalorganic Vapor Phase Epitaxy for 1.55mm laser applications were investigated using atomic force microscopy, photoluminescence spectroscopy and X-ray diffraction. The morphology exhibits a strong anisotropic and modulated behavior. The photoluminescence spectrum shows a broad emission band below the fundamental quantum well transition. The results indicate a strong influence of the growth rate, growth temperature and barrier composition on the surface morphology, and on the optical and structural properties of the ZNS structures. Ridge wave-guide ZNS-MQW laser structures grown at optimized conditions exhibited excellent electro-optic characteristics with low threshold current and high efficiency |
| Disciplinas: | Física y astronomía |
| Palabras clave: | Física de materia condensada, Optica, Semiconductores, Pozos cuánticos, Morfología, Propiedades ópticas, Láser, Fotoluminiscencia |
| Keyword: | Physics and astronomy, Condensed matter physics, Optics, Semiconductors, Quantum wells, Morphology, Optical properties, LASER, Photoluminescence |
| Texto completo: | Texto completo (Ver HTML) |
