| Revista: | Brazilian journal of physics |
| Base de datos: | PERIÓDICA |
| Número de sistema: | 000309113 |
| ISSN: | 0103-9733 |
| Autors: | Narvaez, Gustavo A1 Torriani, I.C.L Cerdeira, F Bean, J.C2 |
| Institucions: | 1Universidade Estadual de Campinas, Instituto de Fisica "Gleb Wataghin", Campinas, Sao Paulo. Brasil 2University of Virginia, Department of Materials Science and Engineering, Charlottesville, Virginia. Estados Unidos de América |
| Any: | 1997 |
| Període: | Dic |
| Volum: | 27 |
| Número: | 4 |
| Paginació: | 632-637 |
| País: | Brasil |
| Idioma: | Inglés |
| Tipo de documento: | Artículo |
| Enfoque: | Experimental, aplicado |
| Resumen en inglés | We report Raman scattering and high-resolution X-ray diffraction measurements performed on a series of MBE-grown Si / Gen / Si quantum wells with n varying from 3 to 6. Our results are consistent with a gradual evolution of the Si / Ge interface which starts with Ge segregation and formation of terraces for low Ge coverage, to smooth 2D Ge layers, bounded by interfacial alloy layers, for coverages superior to 4M Ls |
| Disciplines | Física y astronomía |
| Paraules clau: | Física de partículas y campos cuánticos, Pozos cuánticos, Dispersión, Espectroscopía Raman, Difracción de rayos X |
| Keyword: | Physics and astronomy, Particle physics and quantum fields, Quantum wells, Scattering, Raman spectroscopy, X-ray diffraction |
| Text complet: | Texto completo (Ver HTML) |
