| Revista: | Brazilian journal of physics |
| Base de datos: | PERIÓDICA |
| Número de sistema: | 000159287 |
| ISSN: | 0103-9733 |
| Autors: | Rubinger, R.M1 Oliveira, A.G. de Ribeiro, G.M Bezerra, J.C Silva, C.M Rodrigues, W.N Moreira, M.V.B |
| Institucions: | 1Universidade Federal de Minas Gerais, Departamento de Física, Belo Horizonte, Minas Gerais. Brasil |
| Any: | 1999 |
| Període: | Dic |
| Volum: | 29 |
| Número: | 4 |
| Paginació: | 793-796 |
| País: | Brasil |
| Idioma: | Inglés |
| Tipo de documento: | Artículo |
| Enfoque: | Analítico |
| Resumen en inglés | In this work we present studies for the behavior of impurity breakdown of two GaAs samples grown by Molecular Beam Epitaxy at 200°C and 300°C. We vary the temperature and the illumination intensity. For the sample grown at 200°C, the transport mechanism after the breakdown is of the same type of the main free carriers at low electric fields. Below 100K, a clear dependence of the threshold electric field with temperature was observed. The sample grown at 300°C shows a breakdown due to an acceptor level at 41meV from the valence band. The threshold electric field increases with illumination due to the generation of free electrons by deep levels. A similar behavior was also observed for a Cr doped GaAs sample |
| Disciplines | Física y astronomía |
| Paraules clau: | Física de materia condensada, Semiconductores, Conductividad, Impurezas, Epitaxia |
| Keyword: | Physics and astronomy, Condensed matter physics, Semiconductors, Conductivity, Impurities, Epitaxy |
| Text complet: | Texto completo (Ver HTML) |
