| Revista: | Brazilian journal of physics |
| Base de datos: | PERIÓDICA |
| Número de sistema: | 000309110 |
| ISSN: | 0103-9733 |
| Autors: | Lima, M. C. A1 Farias, G. A2 Freire, V. N |
| Institucions: | 1Universidade Federal do Ceara, Centro de Ciencias Exatas, Fortaleza, Ceara. Brasil 2Universidade Federal do Maranhao, Departamento de Fisica, Sao Luis, Maranhao. Brasil |
| Any: | 1997 |
| Període: | Dic |
| Volum: | 27 |
| Número: | 4 |
| Paginació: | 560-566 |
| País: | Brasil |
| Idioma: | Inglés |
| Tipo de documento: | Artículo |
| Enfoque: | Experimental, aplicado |
| Resumen en inglés | It is shown that the existence of nonabrupt interfaces modify electric field effects on the electron transmission through a GaAs/AlxGa1-xAs double-barrier. When the applied electric intensity is 25 kV/cm, and the abrupt well and barriers are 100 Å wide, interfaces as thin as two GaAs lattice parameters are responsible for shifts at least of 10 meV in the electron tunneling resonance energies. The type of interface potential and electron effective mass description changes significantly theoretical results related to the electric field influence on the electron transmission properties |
| Disciplines | Física y astronomía |
| Paraules clau: | Física de materia condensada, Transmisión de electrones, Campo eléctrico, Tunelaje |
| Keyword: | Physics and astronomy, Condensed matter physics, Electron transmission, Electric field, Tunneling |
| Text complet: | Texto completo (Ver HTML) |
