Revista: | Brazilian journal of physics |
Base de datos: | PERIÓDICA |
Número de sistema: | 000310509 |
ISSN: | 0103-9733 |
Autors: | Duque, C.A1 Oliveira, L.E2 Dios-Leyva, M. de3 |
Institucions: | 1Universidad de Antioquia, Instituto de Física, Medellín, Antioquia. Colombia 2Universidade Estadual de Campinas, Instituto de Fisica, Campinas, Sao Paulo. Brasil 3Universidad de La Habana, Departamento de Física Teórica, La Habana. Cuba |
Any: | 2006 |
Període: | Sep |
Volum: | 36 |
Número: | 3B |
Paginació: | 1038-1041 |
País: | Brasil |
Idioma: | Inglés |
Tipo de documento: | Nota breve o noticia |
Enfoque: | Experimental |
Resumen en inglés | The effects of crossed electric and magnetic fields on the electronic and exciton properties in semiconductor heterostructures have been investigated within the effective-mass and parabolic band approximations for both bulk GaAs and GaAs-Ga1-xAl xAs quantum wells. The combined effects on the heterostructure properties of the applied crossed electric/magnetic fields together with the direct coupling between the exciton center of mass and internal exciton motions may be dealt with via a simple parameter representing the distance between the electron and hole magnetic parabolas. Calculations lead to the expected behavior for the exciton dispersion in a wide range of the crossed electric/magnetic fields, and present theoretical results are found in good agreement with available experimental measurements |
Disciplines | Física y astronomía |
Paraules clau: | Física de partículas y campos cuánticos, Pozos cuánticos, Campo magnético, Campo eléctrico, Excitones |
Keyword: | Physics and astronomy, Particle physics and quantum fields, Quantum wells, Magnetic field, Electric field, Excitons |
Text complet: | Texto completo (Ver HTML) |