Correlated electron-hole transitions in bulk GaAs and GaAs-(Ga,Al)As quantum wells: effects of applied electric and in-plane magnetic fields



Título del documento: Correlated electron-hole transitions in bulk GaAs and GaAs-(Ga,Al)As quantum wells: effects of applied electric and in-plane magnetic fields
Revista: Brazilian journal of physics
Base de datos: PERIÓDICA
Número de sistema: 000310509
ISSN: 0103-9733
Autors: 1
2
3
Institucions: 1Universidad de Antioquia, Instituto de Física, Medellín, Antioquia. Colombia
2Universidade Estadual de Campinas, Instituto de Fisica, Campinas, Sao Paulo. Brasil
3Universidad de La Habana, Departamento de Física Teórica, La Habana. Cuba
Any:
Període: Sep
Volum: 36
Número: 3B
Paginació: 1038-1041
País: Brasil
Idioma: Inglés
Tipo de documento: Nota breve o noticia
Enfoque: Experimental
Resumen en inglés The effects of crossed electric and magnetic fields on the electronic and exciton properties in semiconductor heterostructures have been investigated within the effective-mass and parabolic band approximations for both bulk GaAs and GaAs-Ga1-xAl xAs quantum wells. The combined effects on the heterostructure properties of the applied crossed electric/magnetic fields together with the direct coupling between the exciton center of mass and internal exciton motions may be dealt with via a simple parameter representing the distance between the electron and hole magnetic parabolas. Calculations lead to the expected behavior for the exciton dispersion in a wide range of the crossed electric/magnetic fields, and present theoretical results are found in good agreement with available experimental measurements
Disciplines Física y astronomía
Paraules clau: Física de partículas y campos cuánticos,
Pozos cuánticos,
Campo magnético,
Campo eléctrico,
Excitones
Keyword: Physics and astronomy,
Particle physics and quantum fields,
Quantum wells,
Magnetic field,
Electric field,
Excitons
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