| Revista: | Brazilian journal of physics |
| Base de datos: | PERIÓDICA |
| Número de sistema: | 000159245 |
| ISSN: | 0103-9733 |
| Autors: | Ferreira, S.O1 Abramof, E Motisuke, P Rappl, P.H.O Closs, H Ueta, A.Y Boschetti, C Bandeira, I.N |
| Institucions: | 1Universidade Federal de Vicosa, Departamento de Física, Vicosa, Minas Gerais. Brasil 2Instituto Nacional de Pesquisas Espaciais, Sao Jose dos Campos, Sao Paulo. Brasil |
| Any: | 1999 |
| Període: | Dic |
| Volum: | 29 |
| Número: | 4 |
| Paginació: | 771-774 |
| País: | Brasil |
| Idioma: | Inglés |
| Tipo de documento: | Artículo |
| Enfoque: | Analítico |
| Resumen en inglés | Using high quality epitaxial layers, we have obtained direct evidence of the band inversion in the Pb1-xSnxTe system .The samples, covering the whole composition range, were grown by molecular beam epitaxy on (111)BaF2 substrates. A minimumin the resistivity as a function of temperature was observed for all samples with Sn composition 0.35 £ x £ 0.70. In the same samples and at the same temperature, temperature dependent optical transmission measurements have revealed a change in signal of the energy gap temperature derivative, a direct evidence of the band inversion. However, the temperature for which the inversion occurs is not the one expected by the band inversion model. This discrepancy is supposed to be due to the Burstein-Moss shift caused by the relatively high hole concentration observed in these samples |
| Disciplines | Física y astronomía |
| Paraules clau: | Física de materia condensada, Semiconductores, Niveles de Fermi, Energía de enlace, Zincblenda, Masa efectiva |
| Keyword: | Physics and astronomy, Condensed matter physics, Semiconductors, Fermi levels, Binding energy, Zincblende, Effective mass |
| Text complet: | Texto completo (Ver HTML) |
