Morphological, electrical and optical properties of Si-doped GaAs grown by MBE on GaAs non-(100)-oriented substrates
Document title: Morphological, electrical and optical properties of Si-doped GaAs grown by MBE on GaAs non-(100)-oriented substrates
Journal: Revista ciencias exatas e naturais
Database: PERIÓDICA
System number: 000198991
ISSN: 1518-0352
Authors: 1
Institutions: 1Universidade Estadual do Centro-Oeste, Departamento de Quimica e Fisica, Guarapuava, Parana. Brasil
2Universidade de Sao Paulo, Instituto de Fisica, Sao Carlos, Sao Paulo. Brasil
Year:
Season: Jul-Dic
Volumen: 3
Number: 2
Pages: 143-156
Country: Brasil
Language: Portugués
Document type: Artículo
Approach: Analítico
Disciplines: Física y astronomía,
Química
Keyword: Física de materia condensada,
Optica,
Fisicoquímica y química teórica,
Semiconductores,
Arseniuro de galio,
Epitaxia,
Propiedades ópticas,
Efecto Hall
Keyword: Physics and astronomy,
Chemistry,
Condensed matter physics,
Optics,
Physical and theoretical chemistry,
Semiconductors,
Gallium arsenide,
Epitaxy,
Optical properties,
Hall effect
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