| Journal: | Computational & applied mathematics |
| Database: | PERIÓDICA |
| System number: | 000310689 |
| ISSN: | 0101-8205 |
| Authors: | Leitao, Antonio1 |
| Institutions: | 1Universidade Federal de Santa Catarina, Departamento de Matematica, Florianopolis, Santa Catarina. Brasil |
| Year: | 2006 |
| Volumen: | 25 |
| Number: | 2-3 |
| Pages: | 187-203 |
| Country: | Brasil |
| Language: | Inglés |
| Document type: | Artículo |
| Approach: | Experimental, aplicado |
| English abstract | We investigate the problem of identifying discontinuous doping profiles in semiconductor devices from data obtained by the stationary voltage-current (VC) map. The related inverse problem correspond to the inverse problem for the Dirichlet-to-Neumann (DN) map with partial data |
| Disciplines: | Ingeniería, Matemáticas |
| Keyword: | Ingeniería de materiales, Matemáticas aplicadas, Semiconductores, Dopaje inverso, Modelo bipolar |
| Keyword: | Engineering, Mathematics, Materials engineering, Applied mathematics, Semiconductors, Inverse doping, Bipolar model |
| Full text: | Texto completo (Ver HTML) |
